808nm Narrow Spectral Linewidth Laser Diode
Product name: 808nm, C-mount package
Laser Diode output power: 2000mW, 2500mW, 5500mW
Application: biomedical, Raman spectrum, military, sensing and optical isolation
Wavelength: 808±0.5nm
808nm narrow spectral linewidth laser diode provides highly stable and accurate infrared laser radiation with high beam intensity and high output power. This powerful 808nm MM infrared laser diode fulfills stable wavelength with narrow linewidth while operating temperature and drive current change.
Featured characteristics:
Compact structure, C-mount package
Fulfilling various range CW output power
Narrow linewidth of 0.2nm, stable wavelength
Good accuracy ± 0.5nm, high stability <8pm / ° C
Widely applicable in the industry
Standard technical parameters of 808nm narrow linewidth laser diode:
| Item | Symbol | NL LD-808-2000 | NL LD-808-2500 | NL LD-808-5500 |
| CW Output Power | P | 2000mW | 2500mW | 5500mW |
| Peak Wavelength | λp | 808±0.5nm | 808±1.5nm | 808±1.5nm |
| Spectrum FWHM | Δλ | 0.2nm | 0.5nm | 0.6nm |
| Threshold Current | Ith | ≤0.5A | ≤0.6A | ≤1.3A |
| Operating Current | Iop | ≤2.5A | ≤3.1A | ≤7.4A |
| Slope Efficiency | η | ≥0.5W/A | ≥1.0W/A | ≥0.9W/A |
| Operating Voltage | Vop | ≤2.0V | ≤1.7V | ≤1.7V |
| Horizontal Beam Divergence | θ∥ | ≤8 deg | ≤8 deg | ≤8 deg |
| Vertical Beam Divergence | θ⊥ | ≤1.0 deg | ≤37 deg | ≤37 deg |
| Wavelength Temperature Coefficient | dλ/dT | 0.07nm/℃ | 0.07nm/℃ | 0.07nm/℃ |
| Locking range, power | P | 1.0 | 0.2-2.5 | 0.5-5.5 |
| Polarization | TE | TE | TE | |
| Storage Temperature | Tstg | -40~80℃ | -40~85℃ | -10~80℃ |
| Operating Temperature | Tc | -20~30℃ | 0~50℃ | -20~30℃ |
| Package | C-mount | C-mount | C-mount |
C-mount package 808nm narrow linewidth multimode laser diode draw:
